Investigation of Perovskite Defects Reduction and Non-Radiative Recombination Kinetics Using In-Situ PL Measurements Under Aerosol Treatment

Lead-halide perovskites have firmly established themselves in the fields of photovoltaics and optoelectronics, demonstrating increasingly competitive power conversion efficiencies comparable to traditional solar cells^[1]. However, achieving further enhancements in performance necessitates mitigating defect-assisted, nonradiative recombination of charge carriers within the perovskite layers. A comprehensive understanding of perovskite formation and associated process control is essential for effectively reducing defects. In this investigation, we examine the crystallization kinetics of the different lead-halide perovskite MAPbI₃, FAPbI_3,CsFAPbI₃ etc. during thermal annealing under aerosol treatment employing in-situ photoluminescence (PL) spectroscopy.<br/>Previously, we have demonstrated a method for performance and stability improvements in FAPbI₃ and other perovskite compositions by crystallization in the presence of a solvent aerosol treatment ^[2,3]^.The in situ PL measurements results demonstrate that aerosol treatment induces favorable morphological changes, leading to improved charge transport properties and reduced defect density within the perovskite film. This characterization approach enables the real-time assessment of optoelectronic properties during perovskite formation and development of improved crystals producing a uniform film with improved morphology under the effect of facile and scalable aerosol treatment. These findings not only shed light on the underlying mechanisms governing the aerosol-assisted modification of perovskite materials but will pave the way for the development of more efficient and stable perovskite-based optoelectronic devices.