Dec 3, 2024
4:30pm - 4:45pm
Sheraton, Fifth Floor, Public Garden
Sajid Husain1,Isaac Harris1,2,Maya Ramesh3,Peter Meisenheimer2,Shashank Ojha4,Lucas Caretta5,Paul Stevenson6,Darrell Schlom3,Lane Martin1,2,Sayeef Salahuddin2,Zhi Yao1,Ramamoorthy Ramesh1,2
Lawrence Berkeley National Laboratory1,University of California, Berkeley2,Cornell University3,Rice University4,Brown University5,Northeastern University6
Sajid Husain1,Isaac Harris1,2,Maya Ramesh3,Peter Meisenheimer2,Shashank Ojha4,Lucas Caretta5,Paul Stevenson6,Darrell Schlom3,Lane Martin1,2,Sayeef Salahuddin2,Zhi Yao1,Ramamoorthy Ramesh1,2
Lawrence Berkeley National Laboratory1,University of California, Berkeley2,Cornell University3,Rice University4,Brown University5,Northeastern University6
The interplay between the spin and charge degrees of freedom is an exciting area of research from the perspectives of both fundamental science and applications such as high-performance, energy efficient computing. Magnon-based memory could be substantially efficient due to its ability to avoid Joule heating during information transfer. Additionally, magnetoelectric (ME) materials offer the ability to control magnetization control using an electric field. In this talk, I will discuss our recent work on a non-volatile, non-destructive memory device utilizing a magnon-driven sensing of the antiferromagnetic state in the multiferroic. This device leverages strong spin-orbit (SO) coupling of spin Hall metal to achieve large output voltages through spin-charge conversion. By employing a simple geometric configuration, we introduce a new ME-SO non-volatile magnetic memory element as a promising alternative to existing random access memory technology. I will also discuss the recent development of MESO and possible pathway to understand the existing issues with materials engineering with open challenges for future research.