Dec 4, 2024
11:00am - 11:15am
Sheraton, Second Floor, Back Bay A
Jonathan Marcks1,2,Mykyta Onizhuk2,Yuxin Wang2,Yizhi Zhu2,Yu Jin2,Benjamin Soloway2,Masaya Fukami2,Nazar Delegan1,2,F. Heremans1,2,Aash Clerk2,Giulia Galli2,David Awschalom2
Argonne National Laboratory1,The University of Chicago2
Jonathan Marcks1,2,Mykyta Onizhuk2,Yuxin Wang2,Yizhi Zhu2,Yu Jin2,Benjamin Soloway2,Masaya Fukami2,Nazar Delegan1,2,F. Heremans1,2,Aash Clerk2,Giulia Galli2,David Awschalom2
Argonne National Laboratory1,The University of Chicago2
Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms such as diamond is crucial to developing these building blocks, as well as applying these systems for sensing applications. However, many defect centers are difficult to access at the single-particle level due to the lack of sensitive readout techniques. We exploit the intrinsic correlation between the charge and spin states of defect centers to measure defect charge populations and dynamics through the steady-state spin population, read-out at the single-defect level with a nearby optically active nitrogen vacancy center. We directly measure ionization and charge relaxation of single dark defects in diamond, effects we do not have access to with traditional coherence-based quantum sensing. These spin resonance methods will find use in studying single-particle dynamics in other solid state defect systems as well as electron systems external to the diamond. [1]<br/><br/>[1] J. C. Marcks, et al. arXiv:2312.02894 (2023)