December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
SF04.05.01

Insights for Achieving High Conductivities in Ga2O3 and (Al,Ga)2O3 Alloys Using Hybrid Functional Calculations

When and Where

Dec 3, 2024
10:30am - 11:00am
Hynes, Level 3, Room 311

Presenter(s)

Co-Author(s)

Joel Varley1

Lawrence Livermore National Laboratory1

Abstract

Joel Varley1

Lawrence Livermore National Laboratory1
Gallium oxide continues to rapidly develop as a candidate for next-generation power electronics owing to its large band gap, controllable conductivity and the availability of large single-crystal substrates grown from the melt. Of significant interest is the formation of alloys with Al to form (Al<i><sub>x</sub></i>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> (AlGO), which lead to a significant increase of the band gap analogous to the AlGaN system, but spanning a much larger rage of ~4.8 eV-8.6 eV. AlGO also exhibits the possibility of different crystal structures and lattice constants, leading to a number of possible epitaxial relationships beyond the wurtzite AlGaN system. Despite this promise, a number of questions remain as to the effectiveness of controllable donor doping and how to overcome the possibility of compensation in the limit high Al-contents, similar to that in AlGaN. Here we assess <i>n</i>-type doping of Ga<sub>2</sub>O<sub>3</sub> in different polymorphs and consider the prospects of doping in the larger-gap Al-containing alloys using first-principles modelling approaches based on hybrid functional calculations. We consider a number of dopants such as the typical group-IV elements, as well as lesser-explored transition-metal donor dopants that have been identified as effective alternatives. We also discuss the role of cation vacancies in the different polymorphs, which are known to be potentially problematic sources of compensation for <i>n</i>-type doping. Our results identify composition regimes in AlGO alloys that may be most effectively targeted for increased band gaps and effective donor doping, with composition regimes specific to particular dopant species. These results provide guidance for doping in Ga<sub>2</sub>O<sub>3</sub> and related alloys incorporated into heterostructure devices.<br/><br/>This work was partially performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 and partially supported by LLNL LDRD funding under Project No. 22-SI-003 and by the Critical Materials Institute, an Energy Innovation Hub funded by the U.S. DOE, Office of Energy Efficiency and Renewable Energy, Advanced Materials & Manufacturing Technologies Office.

Symposium Organizers

Jianlin Liu, University of California, Riverside
Farida Selim, Arizona State University
Chih-Chung Yang, National Taiwan Univ
Houlong Zhuang, Arizona State University

Session Chairs

Farida Selim
Blas Uberuaga

In this Session