Dec 5, 2024
9:00am - 9:15am
Hynes, Level 2, Room 207
Youngki Yeo1,Takashi Taniguchi2,Kenji Watanabe2,Moshe Ben Shalom1
Tel Aviv University1,National Institute for Materials Science2
Youngki Yeo1,Takashi Taniguchi2,Kenji Watanabe2,Moshe Ben Shalom1
Tel Aviv University1,National Institute for Materials Science2
Parallel stacking of van der Waals (vdW) materials breaks centrosymmetry in the lattice and induces charge transfer between the top and bottom layers. Marginal angle differences between these layers dictate the formation of Moire patterns giving rise to alternating polarization domains and dislocations. However, the rigid nature of Moire angles constrains the formation and positioning of dislocations. To address these limitations, we introduce a novel device concept minimizing the formation energy of dislocations. Dislocation can be added and removed by electric fields and exhibiting hysteresis behaviors. Furthermore, we have successfully demonstrated the capability to manipulate the Moire twist angle within our devices. These findings not only offer a practical method for controlling polarization and Moire twist-related phenomena in vdW materials but also suggest exciting prospects for the development of advanced electronic devices.