Dec 4, 2024
8:00pm - 10:00pm
Hynes, Level 1, Hall A
Sang Hwa Park1,Nicolas Leconte2,Fengping Li2,Ayoung Yuk1,Daesung Park1,Hyobin Yoo1,Jeil Jung2,Sang Mo Yang1
Sogang University1,University of Seoul2
Sang Hwa Park1,Nicolas Leconte2,Fengping Li2,Ayoung Yuk1,Daesung Park1,Hyobin Yoo1,Jeil Jung2,Sang Mo Yang1
Sogang University1,University of Seoul2
Two-dimensional (2D) materials with vertical ferroelectric and piezoelectric properties are highly promising for future ultrathin electronic devices. In this viewpoint, moiré superlattices in van der Waals heterostructure with alternating vertical-polarization have attracted considerable attention in the communities of 2D materials and electronic devices. Bilayer of transition metal dichalcogenide (TMD, MX<sub>2</sub> structure where M: transition metal and X: chalcogen) stacked with a small angle gives birth to a micro-to-nano scale of moiré superlattices with two types of ferroelectric domains, so-called MX and XM domains. This new type of ferroelectric domains changes its polar structures by interlayer lateral sliding, which is a novel polarization switching mechanism distinct from conventional ferroelectrics.<br/><br/>Here, we present an ongoing study about the mechanical manipulation of ferroelectric domain structures (particularly, nodes where domain walls meet) performed by atomic force microscopy (AFM). Normal load of electrically-grounded AFM tip and its subsequent motion can guide to the top layer slips relative to the bottom layer, resulting in ripple-motion-like rearrangement in ferroelectric domains. Interestingly, this mechanical manipulation enabled the movement of the nodes or even break-up of them in the region where four domains meet (hereinafter referred to as “4-domain region”). However, such manipuation of nodes was not possible in the region where six domains meet (6-domain region). Theoretically, the 6-domain region has higher energy barrier for the node slip, leading to huge energy penalty compared to that of 4- domain’s. In accordance to both calculation and experimental results, we suggest the existence of these topologically protected and unprotected nodes in moiré bilayer heterostructures. Understanding the planar-nodes in moiré ferroelectric domains can be a major step to manipulate the switches made of a bistate topological dislocations. This work on dislocations opens up a new venue for the nanoscale control of ferroelectric domains and resultant topological structures in twisted TMD bilayer via non-electrical ways.