Dec 4, 2024
9:15am - 9:30am
Hynes, Level 3, Room 301
Jasmeen Nespoli1,Maartje van der Meer1,Tom Savenije1
Delft University of Technology1
Last years mixed Sn-Pb perovskites have been applied in single- and multi-junction solar cells as absorbers with a low bandgap energy down to 1.2-1.3 eV, reaching power conversion efficiencies of 23%. However, the performance is still limited by tin oxidation resulting in p-type self-doping. To counteract doping, a plethora of additives has been explored, including SnF
2. To shed light on the functionality of this additive, we prepared mixed Sn-Pb perovskite thin films (Cs
0.25FA
0.75Sn
0.5Pb
0.5I
3) with varying amounts of SnF
2 ranging from 0 to 20 mol% in the spin-coating solution. The dark conductivity of corresponding thin films was analyzed via steady state microwave conductance techniques. A large decrease of more than one order of magnitude in conductivity from ∼85 to <∼2 S/m was observed on going from 0 to 1-2 mol% SnF
2, while no further measurable reduction occurs for higher SnF
2 concentrations. Moreover, we demonstrate that the minimum SnF
2 addition required to achieve this reduction in conductivity is not absolute but is highly dependent on the initial quality of the SnI
2 precursor. In addition, we also investigated the dynamics of laser-induced excess carriers as function of the SnF
2 concentrations using time-resolved microwave conductivity. Although the charge carrier mobility is not affected, the charge carrier lifetime progressively increases with higher SnF
2 concentrations up to 10 mol% from ∼102 to ∼442 ns. By fitting the laser intensity-dependent photoconductivity signals with a model, the main kinetic parameters affecting the photocarrier dynamics can be extracted. From the results we conclude that both the doping but also the defect density concomitantly decreases with increasing SnF
2, with the most prominent changes between 0 and 2 mol%. Via additional measurements of optical and opto-electronic properties we also noticed a slight reduction in the Urbach energy and optically active, shallow trap states upon SnF
2 addition. In contrast, no significant structural and/or morphological changes of the perovskite films on SnF
2 addition could be discerned. Therefore, it is inferred that only a minuscule fraction of the mixed Sn-Pb perovskite is modified by SnF
2, in contrast with the tremendous improvement in the charge carrier properties. We attribute this improvement to the fact that SnF
2 scavenges the oxidized Sn
4+ from the spin-coating solution, leading to reduced self-doping. To suppress doping and reduce the crystal defect density, our work underlines the importance of the quality of the SnI
2 precursor in combination with the optimal SnF
2 concentration on the perovskite opto-electronic properties.