December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
EN07.05.03

Reducing the Doping and Defect Density in Mixed Sn-Pb Halide Perovskite by SnF2

When and Where

Dec 4, 2024
9:15am - 9:30am
Hynes, Level 3, Room 301

Presenter(s)

Co-Author(s)

Jasmeen Nespoli1,Maartje van der Meer1,Tom Savenije1

Delft University of Technology1

Abstract

Jasmeen Nespoli1,Maartje van der Meer1,Tom Savenije1

Delft University of Technology1
Last years mixed Sn-Pb perovskites have been applied in single- and multi-junction solar cells as absorbers with a low bandgap energy down to 1.2-1.3 eV, reaching power conversion efficiencies of 23%. However, the performance is still limited by tin oxidation resulting in p-type self-doping. To counteract doping, a plethora of additives has been explored, including SnF2. To shed light on the functionality of this additive, we prepared mixed Sn-Pb perovskite thin films (Cs0.25FA0.75Sn0.5Pb0.5I3) with varying amounts of SnF2 ranging from 0 to 20 mol% in the spin-coating solution. The dark conductivity of corresponding thin films was analyzed via steady state microwave conductance techniques. A large decrease of more than one order of magnitude in conductivity from ∼85 to <∼2 S/m was observed on going from 0 to 1-2 mol% SnF2, while no further measurable reduction occurs for higher SnF2 concentrations. Moreover, we demonstrate that the minimum SnF2 addition required to achieve this reduction in conductivity is not absolute but is highly dependent on the initial quality of the SnI2 precursor. In addition, we also investigated the dynamics of laser-induced excess carriers as function of the SnF2 concentrations using time-resolved microwave conductivity. Although the charge carrier mobility is not affected, the charge carrier lifetime progressively increases with higher SnF2 concentrations up to 10 mol% from ∼102 to ∼442 ns. By fitting the laser intensity-dependent photoconductivity signals with a model, the main kinetic parameters affecting the photocarrier dynamics can be extracted. From the results we conclude that both the doping but also the defect density concomitantly decreases with increasing SnF2, with the most prominent changes between 0 and 2 mol%. Via additional measurements of optical and opto-electronic properties we also noticed a slight reduction in the Urbach energy and optically active, shallow trap states upon SnF2 addition. In contrast, no significant structural and/or morphological changes of the perovskite films on SnF2 addition could be discerned. Therefore, it is inferred that only a minuscule fraction of the mixed Sn-Pb perovskite is modified by SnF2, in contrast with the tremendous improvement in the charge carrier properties. We attribute this improvement to the fact that SnF2 scavenges the oxidized Sn4+ from the spin-coating solution, leading to reduced self-doping. To suppress doping and reduce the crystal defect density, our work underlines the importance of the quality of the SnI2 precursor in combination with the optimal SnF2 concentration on the perovskite opto-electronic properties.

Keywords

additives | perovskites | photoconductivity

Symposium Organizers

David Fenning, University of California, San Diego
Monica Morales-Masis, University of Twente
Hairen Tan, Nanjing University
Emily Warren, National Renewable Energy Laboratory

Symposium Support

Bronze
First Solar, Inc.
National Renewable Energy Laboratory

Session Chairs

Monica Morales-Masis
Ulrich Paetzold

In this Session