Dec 3, 2024
8:00pm - 10:00pm
Hynes, Level 1, Hall A
Gowtham Polumati1,Barbara A Muñiz Martínez2,Mauricio Terrones3,Andres De Luna Bugallo2,Parikshit Sahatiya1
Birla Institute of Technology and Science, Pilani – Hyderabad Campus1,Universidad Nacional Autónoma de México2,University of Pennsylvania3
Gowtham Polumati1,Barbara A Muñiz Martínez2,Mauricio Terrones3,Andres De Luna Bugallo2,Parikshit Sahatiya1
Birla Institute of Technology and Science, Pilani – Hyderabad Campus1,Universidad Nacional Autónoma de México2,University of Pennsylvania3
This work demonstrates different configurations of vertically stacked two step CVD (chemical vapour deposition) grown monolayers of MoS<sub>2</sub>-ReS<sub>2</sub> and stacking significance in tailoring band type and hence charge migration phenomenon upon visible illumination. The MoS<sub>2</sub>/ReS<sub>2</sub> heterostructure is popularly known for its high stability, greater light matter interaction due to high absorption coefficient, strong in-plane carrier mobility of MoS<sub>2</sub>,direct bandgap of ReS<sub>2</sub> irrespective of the number of layers ,tunable transport mechanism upon different stacking configurations and greater responsivity of ReS<sub>2</sub> due to its high density of states .To better understand the issue of stacking for different configurations i.e. ReS<sub>2</sub>-MoS<sub>2</sub>(MoS<sub>2</sub> on top) or MoS<sub>2</sub>-ReS<sub>2</sub> (ReS<sub>2</sub> on top), the optical properties are examined by micro-photoluminescence wherein it was interestingly observed a change in band type in accordance with stacking order for different stacking configurations i.e. Type-I for ReS<sub>2</sub> on top and Type-II for MoS<sub>2</sub> on top. Furthermore, the morphology was examined to confirm the stacking of vertical heterostructure by HR-TEM which clearly reveals the formation of ReS<sub>2</sub> on MoS<sub>2</sub> and vice-versa. Photodetection experiment was conducted for devices having different stacking configurations and it was noted that ReS<sub>2</sub> on top (Type-I) and MoS<sub>2</sub> on top (Type-II) exhibits responsivity of 400 A/W and 72 A/W respectively under visible illumination. It was clearly observed that the responsivity of Type-I band alignment is much higher than that of Type-II band alignment. The increment in the responsivity value when ReS<sub>2</sub> is on top (Type-I band alignment) is due to the effective separation of photogenerated carriers to MoS<sub>2</sub> and high symmetric crystallographic orientation that was confirmed by low temperature PL studies and extracted band structure. It is noted that suitable stacking plays a vital role in deciding suitable band alignment and accordingly the desired responsivity. The insightful study of such 2D vertically stacked heterostructure configurations are important to conveniently decide the best version of device in developing high responsive photodetectors.