Dec 2, 2024
2:00pm - 2:15pm
Sheraton, Fifth Floor, The Fens
Shangda Li1,Shang Liu1,Jules Gardener2,Austin Akey2,Xiaoxue Gao1,Xiaoxin Wang1,Jifeng Liu1
Dartmouth College1,Harvard University2
Shangda Li1,Shang Liu1,Jules Gardener2,Austin Akey2,Xiaoxue Gao1,Xiaoxin Wang1,Jifeng Liu1
Dartmouth College1,Harvard University2
The elemental topological quantum material α-Sn has recently gained significant attention for its unique transport properties and potential spintronics applications [1]. Overcoming the notorious "tin pest" instability, α-Sn with its diamond cubic structure offers promising integration possibilities for topological quantum devices on Si. However, direct growth on Si is challenged by a significant lattice mismatch. Growths of α-Sn on Si were reported, but the thickness was limited to below 10 nm [2].<br/><br/>In this study, we introduce a novel method to grow 200 nm-thick α-Sn microstructures with lateral dimensions reaching 0.4-1 μm on a Si substrate by employing a 2 nm-thick Ge seed layer via physical vapor deposition [3]. Up to 86% of as-deposited β-Sn converts to α-Sn under optimal thermal annealing conditions, which significantly enhances the phase purity compared to ~50% α-Sn in our previous work of Ge-doped α-Sn grown on native oxide on Si [4]. Cooling process is found to be critical to α-Sn formation. Using in situ Raman spectroscopy, we confirm that as-deposited β-Sn melts during rapid thermal annealing (RTA) at 350-450°C and solidifies into α-Sn upon cooling, facilitated by heterogeneous nucleation on the Ge layer. High-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) reveal single-grain α-Sn microdots with identical crystallographic orientation within each microdot. Approximately 1 at.% Ge diffuses into the α-Sn, aiding thermodynamic stabilization and processing. Tuning cooling conditions and employing HCl etching, we further achieve phase-pure α-Sn microstructures suitable for quantum device applications. This α-Sn incorporates a compressive strain of ~-0.59%, induced by the Ge seed layer, confirming its nature as a 3D topological Dirac semimetal compatible with Si-based quantum devices [5]. Our discoveries provide a platform for several potential applications, including exploring point-contact induced superconductivity [6], investigating transport properties [7], and studying optical modulation [8]. Our method’s compatibility with CMOS technology presents a significant advancement toward quantum materials integration on Si and opens up opportunities for practical applications in quantum electronics and spintronics. Future work will explore a broader range of Ge seed layer thicknesses and epitaxial growth of Ge seed layer on Si substrate to further optimize the α-Sn growth process and device integration.<br/><br/>Reference<br/>[1] Si, N. <i>et al.</i> <i>J. Phys. Chem. Lett.</i> <b>2020</b>, <i>11</i>, 1317–1329.<br/>[2] Ding, J. <i>et al.</i> <i>Adv. Mater.</i> <b>2021</b>, <i>33</i>, 1–9.<br/>[3] Liu, S. <i>et al.</i> <i>Small Methods</i> <b>2024</b>, 2400550.<br/>[4] Liu, S. <i>et al.</i> <i>Commun. Mater.</i> <b>2022</b>, <i>3</i>, 17.<br/>[5] Anh, L. D. <i>et al.</i> <i>Adv. Mater.</i> <b>2021</b>, <i>33</i>, 2104645.<br/>[6] Aggarwal, L. <i>et al.</i> <i>Nat. Mater.</i> <b>2016</b>, <i>15</i>, 32–37.<br/>[7] Ding, Y. <i>et al.</i> <i>arXiv: 2308.02192</i> <b>2023</b>.<br/>[8] Li, W. <i>et al.</i> <i>Nano Lett.</i> <b>2014</b>, <i>14</i>, 955–959.