December 1 - 6, 2024
Boston, Massachusetts
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2024 MRS Fall Meeting & Exhibit
SB13.03.05

Coupled Effects of Electronic and Nuclear Energy Loss on Radiation Response of Oxide Perovskites

When and Where

Dec 3, 2024
4:00pm - 4:30pm
Hynes, Level 3, Room 308

Presenter(s)

Co-Author(s)

William Weber1

The University of Tennessee, Knoxville1

Abstract

William Weber1

The University of Tennessee, Knoxville1
Oxide perovskites (ABO<sub>3</sub>) exhibit fascinating properties that identify them as key materials for the next generation of multifunctional devices, and their response to electron and ion beam irradiation can provide insights into the behavior expected in hybrid perovskites. It is well-established that atomic-level defects are created by elastic energy transfer (nuclear energy loss), S<sub>n</sub>, from charged particles to atomic nuclei; however, the effects of inelastic electronic energy loss, S<sub>e</sub>, to target electrons are more complicated. At low to medium energies, the response of many oxide perovskites to charged particles is dependent on the ratio of S<sub>e</sub>/S<sub>n</sub>. At low values of S<sub>e</sub>/S<sub>n</sub>, radiation damage by elastic collision processes dominates, often leading to phase transformations, such as amorphization. When S<sub>e</sub> is comparable to S<sub>n</sub>, the coupling of electronic and nuclear processes along the ion trajectory can lead to ionization-induced dynamic recovery, reducing the rate of damage production and accumulation. For high-energy ions with high values of S<sub>e</sub>/S<sub>n</sub> (&gt;100), the dissipation of electronic energy loss via electron-phonon coupling dominates, and amorphous nanotracks due to melt-quenching along the ion trajectory can form for S<sub>e</sub> values above a threshold. In the presence of pre-existing defects, amorphous tracks are formed at much lower values of S<sub>e</sub>, and track sizes increase with defect concentration and values of S<sub>e</sub>. For charged particles with high S<sub>e</sub>/S<sub>n</sub> values (&gt;100), but with S<sub>e</sub> values below the threshold for amorphous track formation, ionization-induced annealing of defects is observed. Experimental data on SrTiO<sub>3</sub>, KTaO<sub>3</sub> and LiTaO<sub>3</sub> will be presented to demonstrate these phenomena. Molecular dynamics simulations combined with the inelastic thermal spike model in these materials confirm the formation of the amorphous tracks due to melt-quenching along the ion trajectory at high values of S<sub>e</sub>, while at intermediate values of S<sub>e</sub>, defect recovery is demonstrated. Two distinct regimes of ionization-induced recovery are observed in SrTiO<sub>3</sub>, and only a single recovery regime is observed in KTaO<sub>3</sub>.

Keywords

defects | radiation effects

Symposium Organizers

Ahmad Kirmani, Rochester Institute of Technology
Felix Lang, Universität Potsdam
Joseph Luther, National Renewable Energy Laboratory
Ian Sellers, University at Buffalo, The State University of New York

Symposium Support

Bronze
APL Energy
Nextron Corporation

Session Chairs

Ahmad Kirmani
Wanyi Nie

In this Session