Enhanced Electronic Transport Properties of High Quality Te-Roll Like Nanostructures

In this work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single-nanostructure back-gated field-effect-transistors via photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced by a facile synthesis and extensively studied by scanning and transmission electron microscopy. The nanostructures are made of pure and crystalline Tellurium with trigonal structure (t-Te), and exhibit p-type conductivity with enhanced field-effect hole mobility between 273 cm²/Vs at 320 K and 881 cm²/Vs at 5 K. The thermal ionization of shallow acceptors, with small ionization energy between 2 and 4 meV, leads to free-hole conduction at high temperatures. The free-hole mobility follows a negative power-law temperature behavior, with an exponent between −1.28 and −1.42, indicating strong phonon scattering in this temperature range. At lower temperatures, the electronic conduction is dominated by nearest-neighbor hopping (NNH) conduction in the acceptor band, with a small activation energy E_NNH ≈ 0.6 meV and an acceptor concentration of N_A ≈ 1×10¹⁶ cm⁻³. These results demonstrate the enhanced electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications.