Dec 3, 2024
8:00pm - 10:00pm
Hynes, Level 1, Hall A
Yagmur Coban1,Zhenkun Yuan1,Andrew Pike1,Gideon Kassa1,Muhammad Hasan2,Kirill Kovnir2,Jifeng Liu1,Geoffroy Hautier1
Dartmouth College1,Iowa State University of Science and Technology2
Yagmur Coban1,Zhenkun Yuan1,Andrew Pike1,Gideon Kassa1,Muhammad Hasan2,Kirill Kovnir2,Jifeng Liu1,Geoffroy Hautier1
Dartmouth College1,Iowa State University of Science and Technology2
The Zintl phosphides AM2P2 (A=Ca, Ba, and M=Cd, Zn) have recently been proposed as a new class of thin-film solar absorbers because of their attractive optoelectronic and defect properties. Our previous work found that these materials have good p-type dopability and could be used as a p-type absorber layer for p-n junction type solar cells. Using first-principles hybrid functional calculations, we systematically explored potential dopants that could lead to adequate p-type doping in the Zintl phosphides. The potential p-type dopants that we considered span quite a range of chemistry, including alkali elements (Na and K) and group 11 elements (Cu and Ag) for substitution of the A and M sites. We also addressed the dopant self-compensation and compensation by other intrinsic donor defects.