December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
NM04.05.02

Enhancing Photogating Gain in Scalable MoS2 Photodetectors Using Nitride-Based Plasmonic Metasurfaces

When and Where

Dec 4, 2024
9:15am - 9:45am
Hynes, Level 1, Room 110

Presenter(s)

Co-Author(s)

Yu-Jung Lu1,2

Academia Sinica1,National Taiwan University2

Abstract

Yu-Jung Lu1,2

Academia Sinica1,National Taiwan University2
Absorption of photons in atomically thin materials has become a challenge in the realization of ultrathin high-performance optoelectronics. While numerous schemes have been used to enhance absorption in two-dimensional semiconductors [1], such enhanced device performance in scalable monolayer [2] photodetectors remains unattained. Here, we demonstrate wafer-scale integration of monolayer single-crystal MoS<sub>2 </sub>photodetectors with a nitride-based resonant plasmonic metasurface to achieve a high detectivity of 2.58 × 10<sup>12</sup> Jones with a record-low dark current of 8 pA and long-term stability over 40 days [3]. We observed an enhancement factor greater than 100 compared to control devices, which can be attributed to the local strong EM field's enhanced photogating effect by the resonant plasmonic metasurface. The combination of monolayer 2D materials with plasmonic metasurfaces opens new possibilities for boosting the performance of optoelectronic devices with design flexibility that accommodates various 2D materials. Given that 2D semiconductors and hafnium nitride (HfN) are not only Si CMOS process compatible but also achievable over wafer scales, our results pave the way for seamlessly integrating 2D semiconductor-based photodetectors into imaging, sensing, and optical communications applications. The detailed mechanisms and potential applications of this technology will be explored further in the presentation.<br/><br/>Reference<br/>[1] Hao-Yu Lan, Yu-Hung Hsieh, Zong-Yi Chiao, Deep Jariwala, Min-Hsiung Shih, Ta-Jen Yen, Ortwin Hess, Yu-Jung Lu*, Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS<sub>2 </sub>Phototransistor with Ultrahigh Photoresponsivity. Nano Lett. 21, 3083–3091 (2021)<br/>[2] Jui-Han Fu, Jiacheng Min, Che-Kang Chang, Chien-Chih Tseng, Qingxiao Wang, Hayato Sugisaki, Chenyang Li, Yu-Ming Chang, Ibrahim Alnami, Wei-Ren Syong, Ci Lin, Feier Fang, Lv Zhao, Chao-Sung Lai, Wei-Sheng Chiu, Wen-Hao Chang, Yu-Jung Lu, Kaimin Shih, Lain-Jong Li*, Yi Wan*, Yumeng Shi*, Vincent Tung*. Orientated Lateral Growth of Two-Dimensional Materials on C-plane Sapphire. Nature Nanotech. 18, 1289–1294 (2023)<br/>[3] Wei-Ren Syong, Jui-Han Fu, Yu-Hsin Kuo, Yu-Cheng Chu, Mariam Hakami, Tzu-Yu Peng, Jason Lynch, Deep Jariwala, Vincent Tung, and Yu-Jung Lu*, Enhancing Photogating Gain in Scalable MoS<sub>2</sub> Plasmonic Photodetectors via Resonant Plasmonic Metasurfaces. ACS Nano 18, 5446–5456 (2024).

Keywords

2D materials | nonlinear effects

Symposium Organizers

Sanghoon Bae, Washington University in Saint Louis
Jeehwan Kim, Massachusetts Institute of Technology
Ho Nyung Lee, Oak Ridge National Laboratory
Nini Pryds, Technical University Denmark

Session Chairs

Rachael Myers-Ward
Vincent Tung

In this Session