December 1 - 6, 2024
Boston, Massachusetts
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2024 MRS Fall Meeting & Exhibit
MT03.03.01

Simulation and Synthesis of Ultrathin Transition Metal Carbides and Transition Metal Dichalcogenides Heterostructures

When and Where

Dec 3, 2024
8:30am - 9:00am
Hynes, Level 2, Room 206

Presenter(s)

Co-Author(s)

Susan Sinnott1,Jiayang Wang1,Alexander Sredenschek1,David Sanchez1,Mauricio Terrones1

The Pennsylvania State University1

Abstract

Susan Sinnott1,Jiayang Wang1,Alexander Sredenschek1,David Sanchez1,Mauricio Terrones1

The Pennsylvania State University1
Non-layered transition metal carbides (TMCs) and layered transition metal dichalcogenides (TMDs) are two extensively studied material families that have garnered significant attention over the past century. Recently, the focus on two-dimensional (2D) materials and heterostructures has given rise to a new field centered on TMC/TMD heterostructures. These heterostructures, formed through chemical conversion, display various configurations featuring coupled 2D–3D interfaces, which result in unique and exotic properties. Xu et al. [1] developed a liquid-metal-assisted chemical vapor deposition (LMCVD) technique to grow large-area ultrathin Mo2C and investigated their robust superconducting properties down to a few nanometers in thickness. Through chemical conversion, Jeon et al. [2] synthesized the β-Mo2C/MoS2 lateral heterostructures exhibiting low contact resistance and a low Schottky barrier height, highlighting their potential as critical hybrid building blocks for future device applications. By combining computational methods, controlled synthesis, and advanced characterization, our collaborative team developed a comprehensive workflow to synthesize and analyze WxC/WS2 heterostructures in a series of consecutive steps.

The initial step involves synthesizing ultrathin tungsten carbide. Due to the material's 2D geometry, the surface effect alters the phase stability, which traditional phase diagrams cannot accurately describe. By utilizing density functional theory (DFT) calculations and thermodynamic analyses, we constructed a chemical potential diagram for WxC in thin-film structures, revealing a different phase stability order compared to its bulk counterpart. Using LMCVD, we identified two phases of tungsten carbide: WC on copper substrates and metastable W2C on gallium substrates. In the next step, we observed that high-temperature (800–900°C) heat treatment in hydrogen sulfide (H2S) partially converted the tungsten carbide (WC and W2C) nanoplates into crystalline WS2. Characterization revealed that WS2 formed on both the edge and basal surfaces of the tungsten carbide platelets. On the basal surface, distinct Moiré patterns indicated the presence of epitaxial and twisted WS2. Using DFT calculations, we explored how W or C termination influences the adhesion work of the resulting heterostructure. The conversion of tungsten carbide to WS2 was found to be more efficient at slightly lower temperatures and shorter durations for W2C than for WC, with facets completely transforming into multilayer WS2. This enhanced conversion for W2C is attributed to a lower diffusion barrier for sulfur atoms into the tungsten carbide crystal, as quantified by nudged elastic band (NEB) calculations. In the final steps, we applied DFT calculations onto atomic models to study the electronic and transport properties across the WC/WS2 and WC/WSe2 interface [3].

The Moiré pattern heterostructure exhibited a greater energetic favorability when compared to the coherent epitaxial strain heterostructure. Our calculations revealed the formation of Schottky barriers within these systems, with the type (n-type or p-type) and height of the Schottky barriers being determined by the termination atoms of WC. We concluded that WC-c/WSe2 has the smallest p-type Schottky barrier height (0.08 eV) among all other heterostructures. Transport properties were further assessed using the Simmons tunneling injection model [4]. These findings yielded valuable insights that can be leveraged in the design of high-performance nano-electronic devices built upon 2D materials.

1 Xu et al., Nature Mater. 2015;14:1135–41. doi:10.1038/nmat4374

2 Jeon et al., ACS Nano. 2018;12:338–46. doi:10.1021/acsnano.7b06417

3 Wang et al., Physical Review Materials 2024; 8:044004. https://doi.org/10.1103/PhysRevMaterials.8.044004

4 J.G. Simmons, Journal of Applied Physics 1963; 34:1793-1803. https://pubs.aip.org/aip/jap/article/34/6/1793/362794/Generalized-Formula-for-the-Electric-Tunnel-Effect

Keywords

interface | surface reaction

Symposium Organizers

Hamed Attariani, Wright State University
Long-Qing Chen, The Pennsylvania State University
Kasra Momeni, The University of Alabama
Jian Wang, Wichita State University

Session Chairs

Hamed Attariani
Kasra Momeni

In this Session