Significant Device Performance Enhancement of 1L MoS₂ nMOSFETs by Van Der Waals Contact Formation with Sb₂Te₃

Nov 29, 2023
2:00pm - 2:15pm

Hynes, Level 3, Ballroom B

Yuta Saito

Naoya Okada

Wen Hsin Chang¹,Shogo Hatayama¹,Yuta Saito¹,Naoya Okada¹,Takahiko Endo²,Yasumitsu Miyata²,Toshifumi Irisawa¹

National Institute of Advanced Industrial Science and Technology¹,Tokyo Metropolitan University²

2D materials | van der Waals

Gabriela Borin Barin, Empa

Shengxi Huang, Rice University

Yuxuan Cosmi Lin, TSMC Technology Inc

Lain-Jong Li, The University of Hong Kong

Silver
Montana Instruments

Bronze
Oxford Instruments WITec
PicoQuant
Raith America, Inc.

Shengxi Huang

Jesse Maassen

Significant Device Performance Enhancement of 1L MoS2 nMOSFETs by Van Der Waals Contact Formation with Sb2Te3