High-Mobility Junction Field-Effect Transistor via Graphene/MoS₂ Heterointerface

May 10, 2022
5:00pm - 7:00pm

Hawai'i Convention Center, Level 1, Kamehameha Exhibit Hall 2 & 3

Taesoo Kim

Sidi Fan

Sanghyub Lee

Min-Kyu Joo

Taesoo Kim¹,Sidi Fan¹,Sanghyub Lee¹,Min-Kyu Joo²,Young Hee Lee¹

Sungkyunkwan University¹,Sookmyung Women's University²

field emission

Zakaria Al Balushi, University of California, Berkeley

Olga Kazakova, National Physical Laboratory

Su Ying Quek, National University of Singapore

Hyeon Jin Shin, Gwangju Institute of Science and Technology

Bronze
Applied Physics Reviews | AIP Publishing
ATTOLIGHT AG
Penn State 2DCC-MIP

Zakaria Al Balushi

High-Mobility Junction Field-Effect Transistor via Graphene/MoS2 Heterointerface