Effects of Crystallization on the Conductance of HfO_x ReRAM by In Situ TEM Method

When and Where

Nov 29, 2022
9:00am - 9:15am

Hynes, Level 1, Room 102

Presenter(s)

Baoming Wang

Alexandre Foucher

Thomas Defferriere

Teodor Todorov

Martin Frank

Franco Stellari

Takashi Ando

John Rozen

Harry Tuller

Frances Ross

Co-Author(s)

Alexandre Foucher¹,Baoming Wang¹,Thomas Defferriere¹,Teodor Todorov²,Martin Frank²,Franco Stellari²,Takashi Ando²,John Rozen²,Harry Tuller¹,Frances Ross¹

Massachusetts Institute of Technology¹,IBM Thomas J Watson Research Center²

Keywords

in situ | oxide | scanning transmission electron microscopy (STEM)

Symposium Organizers

Dongsheng Li, Pacific Northwest National Laboratory

Qian Chen, University of Illinois at Urbana-Champaign

Yu Han, King Abdullah University of Science and Technology

Barnaby Levin, Direct Electron LP

Symposium Support

Bronze
King Abdullah University of Science and Technology
MilliporeSigma

Session Chairs

Jungwon Park

Haimei Zheng

2022 MRS Fall Meeting

Effects of Crystallization on the Conductance of HfOx ReRAM by In Situ TEM Method