High-Mobility Low-Temperature Metalorganic Vapor Epitaxy Grown (010) β-Ga₂O₃Homoepitaxial Films and Its Application to Realize Low Resistance Ohmic Contacts

Apr 19, 2021
1:55pm - 2:10pm

EL04

Saurav Roy

Arkka Bhattacharyya¹,Praneeth Ranga¹,Saurav Roy¹,Sriram Krishnamoorthy¹

The University of Utah¹

crystal growth | selective area deposition | vapor phase epitaxy (VPE)

Hongping Zhao, The Ohio State University

Masataka Higashiwaki, National Institute of Information & Comm Tech

Robert Kaplar, Sandia National Laboratories

Julien Pernot, University of Grenoble

Silver
Taiyo Nippon Sanso

Sriram Krishnamoorthy

Hongping Zhao

High-Mobility Low-Temperature Metalorganic Vapor Epitaxy Grown (010) β-Ga2O3 Homoepitaxial Films and Its Application to Realize Low Resistance Ohmic Contacts