Layer-Number Dependence of Metallic Transport Behavior in MoS₂ by Molecular Charge Transfer Doping

Dec 7, 2021
9:45am - 9:50am

EQ20-Virtual

Keigo Matsuyama¹,Takeshi Yoshimura¹,Norifumi Fujimura¹,Daisuke Kiriya¹

Osaka Prefecture University¹

electrical properties | metal-insulator transition

Zakaria Al Balushi, University of California, Berkeley

Cinzia Casiraghi, University of Manchester

Joshua Robinson, The Pennsylvania State University

Hyeon Jin Shin, Samsung Advanced Institute of Technology

Silver
Penn State 2DCC-MIP

Nadire Nayir

Hyeon Jin Shin

Layer-Number Dependence of Metallic Transport Behavior in MoS2 by Molecular Charge Transfer Doping