p-Type Diamond/n-Type β-Ga₂O₃ Heterojunctions Fabricated Using Direct-Bonding Technique

Dec 6, 2021
1:00pm - 1:05pm

EQ19-Virtual

Phongsaphak Sittimart^1,2,Shinya Ohmagari¹,Takashi Matsumae¹,Hitoshi Umezawa¹,Tsuyoshi Yoshitake²

National Institute of Advanced Industrial Science and Technology (AIST)¹,Kyushu University²

Anke Krueger, Julius-Maximilians-Universität Würzburg

Emmanuel Scorsone, Commissariat à l’énergie atomique et aux énergies alternatives

Mariko Suzuki, University of Cádiz

Oliver Williams, Cardiff University School of Physics and Astronomy

Anke Krueger

Emmanuel Scorsone

Mariko Suzuki

Oliver Williams

p-Type Diamond/n-Type β-Ga2O3 Heterojunctions Fabricated Using Direct-Bonding Technique