Lowest Contact Resistance for High Drain Current Density >1A/mm at Diamond MOSFETs with Heavily Boron-Doped Source and Drain

Nov 30, 2021
3:00pm - 3:15pm

Hynes, Level 1, Room 101

Fuga Asai

Ken Kudara

Fuga Asai¹,Ken Kudara¹,Masakazu Arai¹,Atsushi Hiraiwa¹,Hiroshi Kawarada^1,2

Waseda Univ¹,Kagami Memorial Research Institute²

diamond | thin film

Anke Krueger, Julius-Maximilians-Universität Würzburg

Emmanuel Scorsone, Commissariat à l’énergie atomique et aux énergies alternatives

Mariko Suzuki, University of Cádiz

Oliver Williams, Cardiff University School of Physics and Astronomy

Bohuslav Rezek