Polarity Switch of WS₂ Transistors Through In Situ Ion Beam-Modified Contacts

Nov 30, 2021
8:00pm - 10:00pm

Hynes, Level 1, Hall B

Alexander Mangus¹,Hattan Abuzaid¹,Aaron Franklin¹

Duke University¹

2D materials | ion-beam processing

Zakaria Al Balushi, University of California, Berkeley

Cinzia Casiraghi, University of Manchester

Joshua Robinson, The Pennsylvania State University

Hyeon Jin Shin, Samsung Advanced Institute of Technology

Silver
Penn State 2DCC-MIP

Zakaria Al Balushi

Joan Redwing

Polarity Switch of WS2 Transistors Through In Situ Ion Beam-Modified Contacts