Al₂O₃ and HfO₂/Si_0.7Ge_0.3 Interface Trap State Reduction via In Situ N₂/H₂ RF Downstream Plasma Passivation

Apr 25, 2019
11:30am - 11:45am

PCC North, 200 Level, Room 224 B

Steven Wolf

Scott Ueda

Kechao Tang

Victor Wang

Victor Wang¹,Michael Breeden¹,Steven Wolf¹,Scott Ueda¹,Kechao Tang¹,Andrew Kummel¹

University of California, San Diego¹

atomic layer deposition

Rinus Lee, GlobalFoundries

Kah-Wee Ang, National University of Singapore

Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin

John Robertson, Cambridge University

Applied Materials, Inc.

Rinus Lee

John Robertson

Al2O3 and HfO2/Si0.7Ge0.3 Interface Trap State Reduction via In Situ N2/H2 RF Downstream Plasma Passivation