April 22 - 26, 2019
Phoenix, Arizona
2019 MRS Spring Meeting
QN03.03.02
Hexagonal Boron Nitride as a Buffer Layer in Monolayer Molybdenum Disulfide Transistors
Hexagonal Boron Nitride as a Buffer Layer in Monolayer Molybdenum Disulfide Transistors
When and Where
Apr 23, 2019
11:00am - 11:15am
11:00am - 11:15am
PCC North, 100 Level, Room 129 A
Presenter(s)
Co-Author(s)
Alexander Mazzoni1,2,Sina Najmaei2,Katherine Price3,2,Robert Burke2,Michael Valentin4,2,Matthew Chin1,2,Madan Dubey2
University of Maryland1,U.S. Army Research Laboratory2,Duke University3,University of California, Riverside4
Keywords
2D materials | electrical properties
Symposium Organizers
Deep Jariwala, University of Pennsylvania
Victor Brar, University of Wisconsin–Madison
SungWoo Nam, University of Illinois at Urbana-Champaign
Ursula Wurstbauer, Technical University of Munich
Symposium Support
Accurion Inc.
attocube systems AG
MilliporeSigma
CreaTec GmbH, represented by Sentys Inc.
attocube systems AG
MilliporeSigma
CreaTec GmbH, represented by Sentys Inc.
Session Chairs
Victor Brar
Ursula Wurstbauer