April 22 - 26, 2019
Phoenix, Arizona
2019 MRS Spring Meeting
EP09.03.11
Nonvolatile Capacitance Changes in Metal-Oxide-Semiconductor Device with Resistive Switching Floating-Gate Structure for Nonvolatile Memory and Programmable Logic Device Application
Nonvolatile Capacitance Changes in Metal-Oxide-Semiconductor Device with Resistive Switching Floating-Gate Structure for Nonvolatile Memory and Programmable Logic Device Application
When and Where
Apr 23, 2019
5:00pm - 7:00pm
5:00pm - 7:00pm
PCC North, 300 Level, Exhibit Hall C-E
Presenter(s)
Co-Author(s)
Minju Kim1,Daehoon Park1,Keonwon Beom1,Paul Yang1,Sunki Kim1,Hyung Jun Kim1,Tae-Sik Yoon1
Myongji University1
Symposium Organizers
Rinus Lee, GlobalFoundries
Kah-Wee Ang, National University of Singapore
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
John Robertson, Cambridge University
Symposium Support
Applied Materials, Inc.
Session Chairs
Catherine Dubourdieu
Rinus Lee
John Robertson