Single-Layer Neuromorphic MoS₂ Memtransistors Fabricated by Helium Ion Beam Irradiation

When and Where

Apr 22, 2019
11:00am - 11:15am

PCC North, 100 Level, Room 129 A

Presenter(s)

Jakub Jadwiszczak

Darragh Keane

Pierce Maguire

Conor Cullen

Yangbo Zhou

Hua Ding Song

Niall McEvoy

Zhi-Min Liao

John Boland

Hongzhou Zhang

Co-Author(s)

Jakub Jadwiszczak^1,2,3,Darragh Keane^1,2,3,Pierce Maguire^1,2,3,Conor Cullen^1,2,3,Yangbo Zhou⁴,Hua Ding Song^5,6,Niall McEvoy^1,2,3,Zhi-Min Liao^5,6,John Boland^1,2,3,Hongzhou Zhang^1,2,3

Trinity College Dublin¹,Centre for Research on Adaptive Nanostructures and Nanodevices²,Advanced Materials and BioEngineering Research Centre³,Nanchang University⁴,Peking University⁵,Collaborative Innovation Center of Quantum Matter⁶

Keywords

2D materials | defects | electrical properties

Symposium Organizers

Deep Jariwala, University of Pennsylvania

Victor Brar, University of Wisconsin–Madison

SungWoo Nam, University of Illinois at Urbana-Champaign

Ursula Wurstbauer, Technical University of Munich

Symposium Support

Accurion Inc.
attocube systems AG
MilliporeSigma
CreaTec GmbH, represented by Sentys Inc.

Session Chairs

Deep Jariwala

2019 MRS Spring Meeting

Single-Layer Neuromorphic MoS2 Memtransistors Fabricated by Helium Ion Beam Irradiation