December 1 - 6, 2019
Boston, Massachusetts
2019 MRS Fall Meeting
FF05.06.43
Characteristics of 2D SnS2 as a Channel Layer in TFT Device
Characteristics of 2D SnS2 as a Channel Layer in TFT Device
When and Where
Dec 3, 2019
8:00pm - 10:00pm
8:00pm - 10:00pm
Hynes, Level 1, Hall B
Presenter(s)
Co-Author(s)
Hyeongtag Jeon1,Hyeongsu Choi1,Hyunwoo Park1,Namgue Lee1
Hanyang University1
Keywords
2D materials
Symposium Organizers
Kevin Musselman, University of Waterloo
Stacey Bent, Stanford University
Karen Gleason, Massachusetts Institute of Technology
David Munoz-Rojas, LMGP Grenoble INP/CNRS
Symposium Support
Gold
GVD Corporation
Lam Research Corp
Silver
Specialty Coating Systems
Bronze
Waterloo Institute for Nanotechnology
GVD Corporation
Lam Research Corp
Silver
Specialty Coating Systems
Bronze
Waterloo Institute for Nanotechnology
Session Chairs
Graziella Malandrino
David Munoz-Rojas