December 1 - 6, 2019
Boston, Massachusetts
2019 MRS Fall Meeting
EN16.03.19

Effect of Channel Morphology and Gating Medium on Tio2 Ion-Gated Transistors

When and Where

Dec 2, 2019
8:00pm - 10:00pm
Hynes, Level 1, Hall B

Presenter(s)

Co-Author(s)

Jo'Elen Hagler1,Arunprabaharan Subramanian1,Ben George1,Irina Valitova1,Sanyasi Rao Bobbara1,Clara Santato1,Fabio Cicoira1

Polytechnique Montréal1

Keywords

x-ray diffraction (XRD)

Symposium Organizers

Albert Romano-Rodriguez, Universitat de Barcelona
Andrei Kolmakov, National Institute of Standards and Technology
Meyya Meyyappan, NASA Ames Research Ctr
Michele Penza, ENEA

Session Chairs

Andrei Kolmakov
Michele Penza
Albert Romano-Rodriguez

In this Session