December 1 - 6, 2019
Boston, Massachusetts
2019 MRS Fall Meeting
FF01.04.03

All-Solid-State Non-Volatile Memory Gated by a Monolayer Electrolyte

When and Where

Dec 2, 2019
2:15pm - 2:45pm
Hynes, Level 3, Room 312

Presenter(s)

Co-Author(s)

Susan Fullerton1,Jierui Liang1,Ke Xu1,Maokun Wu2,Benjamin Hunt3,Wei-Hua Wang2,Kyeongjae Cho4

University of Pittsburgh1,Nankai University2,Carnegie Mellon University3,The University of Texas at Dallas4

Keywords

2D materials | electrical properties

Symposium Organizers

Zakaria Al Balushi, University of California, Berkeley
Deep Jariwala, University of Pennsylvania
Olga Kazakova, National Physical Laboratory
Amber McCreary, National Institute of Standards and Technology

Symposium Support

Gold
AIXTRON SE

Silver
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)

Bronze
Accurion Inc.
IOP Publishing Ltd - 2D Materials
Scienta Omicron, Inc.

Session Chairs

Thomas Kempa
Joshua Robinson

In this Session