December 1 - 6, 2019
Boston, Massachusetts
2019 MRS Fall Meeting
EL05.04.05

1.4×107 cm/s Carrier Velocity and RF Power Performance Biased at −70 V for 2DHG Diamond MOSFETs with Thick ALD-Al2O3 Film

When and Where

Dec 2, 2019
4:30pm - 4:45pm
Hynes, Level 1, Room 107

Presenter(s)

Co-Author(s)

Ken Kudara1,Shoichiro Imanishi1,Kiyotaka Horikawa1,Atsushi Hiraiwa1,Hiroshi Kawarada1,2

Waseda University1,Kagami Memorial Research Institute for Materials Science and Technology, Waseda Univ2

Keywords

atomic layer deposition | diamond

Symposium Organizers

Mariko Suzuki, Cornes Technologies Ltd
Thomas Schuelke, Fraunhofer USA
Emmanuel Scorsone, CEA
Satoshi Yamasaki, National Institute of Advanced Industrial Science and Technology

Symposium Support

Silver
Seki Diamond Systems, Cornes Technologies

Bronze
Applied Diamond Inc.
DiamFab
ESIEE Paris - CCIR Paris Ile-de-France
Fraunhofer USA - Center for Coatings and Diamond Technologies
PhDTalent
Plasmability LLC

Session Chairs

Etienne Gheeraert

In this Session