December 1 - 6, 2019
Boston, Massachusetts
2019 MRS Fall Meeting
FF01.21.24
Strong Carrier-Induced Electric Double Layer for Engineering Electronic Properties of Indium Selenide Field-Effect Transistors
When and Where
Dec 5, 2019
8:00pm - 10:00pm
8:00pm - 10:00pm
Hynes, Level 1, Hall B
Presenter(s)
Co-Author(s)
Chih-Yi Cheng1,Wei-Liang Pai2,Yi-Hsun Chen1,Shao-Yu Chen3,Raman Sankar2,Fang-Cheng Chou2,Chun-Wei Chen2,Chi-Te Liang2,Wei-Hua Wang1
Academia Sinica1,National Taiwan University2,Monash University3
Keywords
2D materials | electrical properties
Symposium Organizers
Zakaria Al Balushi, University of California, Berkeley
Deep Jariwala, University of Pennsylvania
Olga Kazakova, National Physical Laboratory
Amber McCreary, National Institute of Standards and Technology
Symposium Support
Gold
AIXTRON SE
Silver
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)
Bronze
Accurion Inc.
IOP Publishing Ltd - 2D Materials
Scienta Omicron, Inc.
AIXTRON SE
Silver
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)
Bronze
Accurion Inc.
IOP Publishing Ltd - 2D Materials
Scienta Omicron, Inc.
Session Chairs
Zakaria Al Balushi
Deep Jariwala
Olga Kazakova
Amber McCreary