A Contact Resistance Comparison with Different Thickness of PEALD Al₂O₃ Passivated H-Diamond MOSFET with Al₂O₃ Dielectric Layers

When and Where

Dec 3, 2019
9:00am - 9:15am

Hynes, Level 1, Room 107

Presenter(s)

Yichen Yao

Harshad Surdi

Manpuneet Benipal

Franz Koeck

Robert Nemanich

Co-Author(s)

Yichen Yao¹,Harshad Surdi¹,Manpuneet Benipal¹,Franz Koeck¹,Robert Nemanich¹

Arizona State University¹

Keywords

diamond | interface

Symposium Organizers

Mariko Suzuki, Cornes Technologies Ltd

Thomas Schuelke, Fraunhofer USA

Emmanuel Scorsone, CEA

Satoshi Yamasaki, National Institute of Advanced Industrial Science and Technology

Symposium Support

Silver
Seki Diamond Systems, Cornes Technologies

Bronze
Applied Diamond Inc.
DiamFab
ESIEE Paris - CCIR Paris Ile-de-France
Fraunhofer USA - Center for Coatings and Diamond Technologies
PhDTalent
Plasmability LLC

Session Chairs

Julien Pernot

2019 MRS Fall Meeting

A Contact Resistance Comparison with Different Thickness of PEALD Al2O3 Passivated H-Diamond MOSFET with Al2O3 Dielectric Layers