December 1 - 6, 2019
Boston, Massachusetts
2019 MRS Fall Meeting
FF01.21.18
GeS Field Effect Transistor for High Temperature Applications
When and Where
Dec 5, 2019
8:00pm - 10:00pm
8:00pm - 10:00pm
Hynes, Level 1, Hall B
Presenter(s)
Co-Author(s)
Matteo Chiesa1,Srinivasa Tamalampudi1,Raman Sankar2,Ibraheem Almansouri3,Jin-You Lu1
Khalifa University of Science and Technology1,Academica Sinica2,Laboratory for Energy and NanoScience (LENS)3
Keywords
2D materials | dislocations
Symposium Organizers
Zakaria Al Balushi, University of California, Berkeley
Deep Jariwala, University of Pennsylvania
Olga Kazakova, National Physical Laboratory
Amber McCreary, National Institute of Standards and Technology
Symposium Support
Gold
AIXTRON SE
Silver
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)
Bronze
Accurion Inc.
IOP Publishing Ltd - 2D Materials
Scienta Omicron, Inc.
AIXTRON SE
Silver
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)
Bronze
Accurion Inc.
IOP Publishing Ltd - 2D Materials
Scienta Omicron, Inc.
Session Chairs
Zakaria Al Balushi
Deep Jariwala
Olga Kazakova
Amber McCreary