December 1 - 6, 2019
Boston, Massachusetts
2019 MRS Fall Meeting
EN11.06.04
Atomistic Structure of Si/GaAs Heterointerfaces Fabricated by Surface Activated Bonding Revealed by STEM Combined with Low-Temperature FIB
When and Where
Dec 3, 2019
2:30pm - 2:45pm
2:30pm - 2:45pm
Sheraton, 3rd Floor, Fairfax B
Presenter(s)
Co-Author(s)
Yutaka Ohno1,Yasuo Shimizu1,Yasuyoshi Nagai1,Ryotaro Aso2,Naoto Kamiuchi2,Hideto Yoshida2,Jianbo Liang3,Naoteru Shigekawa3
Tohoku University1,Osaka University2,Osaka City University3
Keywords
scanning transmission electron microscopy (STEM)
Symposium Organizers
David Young, National Renewable Energy Laboratory
Stefaan De Wolf, King Abdullah University of Science and Technology
Kaining Ding, Research Center Juelich
Takuya Matsui, National Institute of Advanced Industrial Science and Technology
Symposium Support
Bronze
Forschungszentrum Jülich GmbH
National Renewable Energy Laboratory
Sinton Instruments
Forschungszentrum Jülich GmbH
National Renewable Energy Laboratory
Sinton Instruments
Session Chairs
Qijie Guo
Adam Lorenz
Takuya Matsui
Eszter Voroshazi