November 25 - 30, 2017
Boston, Massachusetts
2017 MRS Fall Meeting
EM04.09.26

Electrical Characterization of Si-Doped N-Type α-Ga2O3 on Sapphire Substrates

When and Where

Nov 30, 2017
8:00pm - 10:00pm
Hynes, Level 1, Hall B

Presenter(s)

Co-Author(s)

Takayuki Uchida1,Kentaro Kaneko1,Shizuo Fujita1

Kyoto University1

Keywords

chemical vapor deposition (CVD) (chemical reaction) | Ni

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Matteo Meneghini, University of Padova
Rachael Myers-Ward, U.S. Naval Research Laboratory

Symposium Support

MRS Invitation to Publish All authors are invited to submit articles based on their 2017 MRS Fall Meeting presentations to journals in the MRS portfolio. (www.mrs.org/publications-news) Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as symposium collections. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more, including MRS Advances print options available at special rates during the meeting week only.

Session Chairs

Robert Kaplar

In this Session