The SiO₂/4H-SiC Interface—Physical Stress, Material Density and Carbon Retention

When and Where

Nov 29, 2017
11:00am - 11:15am

Hynes, Level 1, Room 101

Presenter(s)

Xiuyan Li

Sang-Soo Lee

Ryan Thorpe

Alexei Ermakov

Voshadhi Amarasinghe

Jonnathan Medina Ramos

Eric Garfunkel

Torgny Gustafsson

Paul Fenter

Leonard Feldman

Co-Author(s)

Xiuyan Li¹,Sang Soo Lee²,Ryan Thorpe¹,Alexei Ermakov¹,Voshadhi Amarasinghe¹,Jonnathan Medina Ramos²,Eric Garfunkel¹,Torgny Gustafsson¹,Paul Fenter²,Leonard Feldman¹

Rutgers, The State University of New Jersey¹,Argonne National Laboratory²

Keywords

x-ray reflectivity

Symposium Organizers

Robert Kaplar, Sandia National Laboratories

Mitsuru Funato, Kyoto University

Matteo Meneghini, University of Padova

Rachael Myers-Ward, U.S. Naval Research Laboratory

Symposium Support

MRS Invitation to Publish All authors are invited to submit articles based on their 2017 MRS Fall Meeting presentations to journals in the MRS portfolio. (www.mrs.org/publications-news) Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as symposium collections. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more, including MRS Advances print options available at special rates during the meeting week only.

Session Chairs

Robert Kaplar

2017 MRS Fall Meeting

The SiO2/4H-SiC Interface—Physical Stress, Material Density and Carbon Retention