November 25 - 30, 2017
Boston, Massachusetts
2017 MRS Fall Meeting
EM01.09.10
Experimental Verification of the Combined Effects of Gate-Dielectric Capacitance and Device Architecture on the Performance of Organic Thin-Film Transistors
When and Where
Nov 30, 2017
4:45pm - 5:00pm
4:45pm - 5:00pm
Hynes, Level 1, Room 102
Presenter(s)
Co-Author(s)
James Borchert1,2,Hagen Klauk1,Ute Zschieschang1,Sabine Ludwigs2
Max Planck Institute for Solid State Physics1,Universität Stuttgart2
Keywords
electrical properties | organic | thin film
Symposium Organizers
Ingo Salzmann, The University of Tokyo, Humboldt-Universität zu Berlin
Jean-Luc Bredas, Georgia Institute of Technology
Seth Marder, Georgia Institute of Technology
Christian Muller, Chalmers University of Technology
Thuc-Quyen Nguyen, University of California, Santa Barbara
Symposium Support
1-Material Inc.
Applied Materials, Inc.
Chemistry of Materials | ACS Publications
Guangzhou ChinaRay Optoelectronic Materials Co. Ltd.
MilliporeSigma (Sigma-Aldrich Materials Science)
Applied Materials, Inc.
Chemistry of Materials | ACS Publications
Guangzhou ChinaRay Optoelectronic Materials Co. Ltd.
MilliporeSigma (Sigma-Aldrich Materials Science)
MRS Invitation to Publish
All authors are invited to submit articles based on their 2017 MRS Fall Meeting presentations to journals in the MRS portfolio. (www.mrs.org/publications-news) Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as symposium collections. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more, including MRS Advances print options available at special rates during the meeting week only.
Session Chairs
Yabing Qi
Henning Sirringhaus
Elizabeth von Hauff