November 26 - December 1, 2016
Boston, Massachusetts
2016 MRS Fall Meeting
EM11.6.09

Can Ultrafast Laser Irradiation Improve Doping of SiC—The Role of Gaseous Environment, Temperature, Fluence, and Number of Pulses on Damage Threshold and Electrical Conductivity

When and Where

Nov 30, 2016
11:15am - 11:30am
Hynes, Level 2, Room 201

Presenter(s)

Co-Author(s)

Rico Cahyadi1,Minhyung Ahn1,Joseph Wendorf1,Magel Su1,Jamie Phillips1,Ben Torralva1,Steven Yalisove1

University of Michigan1

Keywords

defects | laser ablation

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Martin Kuball, University of Bristol
Matteo Meneghini, University of Padova

Symposium Support

All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.

Session Chairs

Robert Kaplar
Lynn Petersen

In this Session