November 26 - December 1, 2016
Boston, Massachusetts
2016 MRS Fall Meeting
NM3.8.07
Towards Integrated Graphene Processing—Nucleation Engineering for High Quality ALD Dielectrics on CVD Graphene
When and Where
Nov 30, 2016
11:15am - 11:30am
11:15am - 11:30am
Hynes, Level 2, Room 203
Presenter(s)
Co-Author(s)
Stephan Hofmann1,Indrat Aria1,Jack Alexander-Webber1,Abhay Sagade1,Zenas Van-Veldhofen1,Philipp Braeuninger-Weimer1,Marie-Blandine Martin1,Kenichi Nakanishi1,Andrea Cabrero1
University of Cambridge1
Keywords
chemical vapor deposition (CVD) (deposition) | electrical properties
Symposium Organizers
Ranjit Pati, Michigan Technological Univ
Don Futaba, AIST
Esko I. Kauppinen, Aalto University School of Science
Ming Zheng, NIST
Symposium Support
The Elizabeth and Richard Henes Center for Quantum Phenomena (Michigan Technological University), Zeon Corporation
All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.
Session Chairs
Yoke Khin Yap
Ming Zheng