November 26 - December 1, 2016
Boston, Massachusetts
2016 MRS Fall Meeting
EM1.4.03
Materials Aspects of InAs/AlSb/GaSb-Based Heterostructures for Quantum Information Processing
When and Where
Nov 29, 2016
11:00am - 11:15am
11:00am - 11:15am
Hynes, Level 3, Room 308
Presenter(s)
Co-Author(s)
Borzoyeh Shojaei1,Mihir Pendharkar1,Anthony McFadden1,Asbjørn Drachmann2,Joon Lee1,McLean Echlin1,Patrick Callahan1,Tresa Pollock1,Michael Flatte3,Charles Marcus2,Chris Palmstrom1
University of California1,University of Copenhagen2,University of Iowa3
Keywords
electrical properties | electronic structure | magnetoresistance (transport)
Symposium Organizers
Ilke Arslan, Argonne National Laboratory
Vincenzo Lordi, Lawrence Livermore National Laboratory
Jeffrey McCallum, University of Melbourne
Christopher Richardson, University of Maryland
Symposium Support
IBM T.J. Watson Research Center, Lawrence Livermore National Laboratory, Pacific Northwest National Laboratory
All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.
Session Chairs
Vincenzo Lordi
Christopher Richardson