Vertical MOSFETs-Using C-H Diamond with Trench-Channel

When and Where

Nov 29, 2016
4:15pm - 4:30pm

Hynes, Level 3, Room 311

Presenter(s)

Tsubasa Muta

Nobutaka Oi

Masafumi Inaba

Toshiki Saito

Daisuke Matsumura

Takuya Kudo

Atsushi Hiraiwa

Hiroshi Kawarada

Co-Author(s)

Tsubasa Muta¹,Nobutaka Oi¹,Masafumi Inaba¹,Toshiki Saito¹,Daisuke Matsumura¹,Takuya Kudo¹,Atsushi Hiraiwa^1,2,Hiroshi Kawarada^1,2

Waseda University¹,The Kagami Memorial Laboratory for Materials Science and Technology²

Keywords

diamond | electrical properties

Symposium Organizers

Paul May, Bristol University

Philippe Bergonzo, CEA Saclay

Timothy Grotjohn, Michigan State University

Mutsuko Hatano, Tokyo Institute of Technology

Symposium Support

Applied Diamond, Arios Ltd. Carat Systems, Cividec Instrumentation GmbH, Cline Innovations, Fine Abrasive Taiwan Fraunhofer USA Inc., Center for Coatings and Diamond Technologies, Microwave Enterprises, LTD, New Diamond Technology, Plassys-Bestek, Seki Diamond

All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.

Session Chairs

Julien Pernot

2016 MRS Fall Meeting