November 26 - December 1, 2016
Boston, Massachusetts
2016 MRS Fall Meeting
EM11.6.04

Analytical Electron Microscopy of Interfacial States in 4H-SiC/SiO2 MOS Devices

When and Where

Nov 30, 2016
9:15am - 9:30am
Hynes, Level 2, Room 201

Presenter(s)

Co-Author(s)

Joshua Taillon1,Voshadhi Amarasinghe2,Sarit Dhar3,Leonard Feldman2,Tsvetanka Zheleva4,Aivars Lelis4,Lourdes Salamanca-Riba1

University of Maryland1,Rutgers University2,Auburn University3,U.S. Army Research Laboratory4

Keywords

compound | electron energy loss spectroscopy (EELS) | scanning transmission electron microscopy (STEM)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Martin Kuball, University of Bristol
Matteo Meneghini, University of Padova

Symposium Support

All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.

Session Chairs

Robert Kaplar
Lynn Petersen

In this Session