November 26 - December 1, 2016
Boston, Massachusetts
2016 MRS Fall Meeting
EM5.13.03
Metal-Insulator Transition, Charge Compensation, and Mobility-Limiting Scattering Mechanisms in MBE Grown La-Doped BaSnO 3 Films and Heterostructures
When and Where
Dec 1, 2016
9:15am - 9:30am
9:15am - 9:30am
Hynes, Level 3, Room 302
Presenter(s)
Co-Author(s)
Abhinav Prakash1,Peng Xu1,Bharat Jalan1
University of Minnesota1
Keywords
defects | molecular beam epitaxy (MBE)
Symposium Organizers
Ramesh Budhani, Indian Instituter of Technology Kanpur
Yoram Dagan, Tel Aviv University
Lena F Kourkoutis, Cornell University
Satoshi Okamoto, Oak Ridge National Laboratory
Symposium Support
Quantum Design, Inc., CrysTec GmbH
All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.
Session Chairs
Ariando Ariando