High Carrier Mobility (~320 cm²/Vs) of Sn-Doped Poly-Ge on Insulator by Low-Temperature Solid-Phase Crystallization

When and Where

Nov 28, 2016
11:00am - 11:15am

Hynes, Level 3, Room 312

Presenter(s)

Taizoh Sadoh

Yuki Kai

Kenta Moto

Ryo Matsumura

Masanobu Miyao

Co-Author(s)

Taizoh Sadoh¹,Yuki Kai¹,Kenta Moto¹,Ryo Matsumura¹,Masanobu Miyao¹

Kyushu University¹

Keywords

Ge | thin film

Symposium Organizers

C. Daniel Frisbie, Univ of Minnesota

Moon Sung Kang, Soongsil University

Karl Leo, Dresden Integrated Center for Applied Physics and Photonic Materials

Takao Someya, The University of Tokyo

Symposium Support

NOVALED GmbH

All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.

Session Chairs

Karl Leo

2016 MRS Fall Meeting

High Carrier Mobility (~320 cm2/Vs) of Sn-Doped Poly-Ge on Insulator by Low-Temperature Solid-Phase Crystallization