November 26 - December 1, 2016
Boston, Massachusetts
2016 MRS Fall Meeting
EM11.2.03

Photoluminescence Characterization of Ion-Implanted and Epitaxial Mg-Doped GaN Prepared on Freestanding GaN Substrates

When and Where

Nov 28, 2016
2:30pm - 2:45pm
Hynes, Level 2, Room 201

Presenter(s)

Co-Author(s)

Shigefusa Chichibu1,Kazunobu Kojima1,Shinya Takashima2,Masaharu Edo2,Katsunori Ueno2,Mitsuaki Shimizu3,Tokio Takahashi3,Shoji Ishibashi3,Akira Uedono4

Tohoku University1, Fuji Electric Co. Ltd.2,AIST3,Univ. of Tsukuba4

Keywords

ion-beam processing | nitride | photoemission

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Martin Kuball, University of Bristol
Matteo Meneghini, University of Padova

Symposium Support

All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.

Session Chairs

Isik Kizilyalli
Gaudenzio Meneghesso

In this Session