November 26 - December 1, 2016
Boston, Massachusetts
2016 MRS Fall Meeting
NM1.19.02
Large-Scale Growth and Characterizations of InAs Nanoleaves on Si (111) Substrates by Molecular-Beam Epitaxy
When and Where
Dec 2, 2016
9:00am - 9:15am
9:00am - 9:15am
Sheraton, 2nd Floor, Liberty ABC
Presenter(s)
Co-Author(s)
Dong Pan1,Hyok So1,Lixia Li1,Jianhua Zhao1
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences1
Keywords
molecular beam epitaxy (MBE) | morphology | self-assembly
Symposium Organizers
Chennupati Jagadish, Australian National Univ
James Cahoon, University of North Carolina at Chapel Hill
Hannah Joyce, University of Cambridge
Qihua Xiong, Nanyang Technological Univ
Symposium Support
JC Nabity Lithography Systems, Lake Shore Cryotronics, Inc., MilliporeSigma (Sigma-Aldrich Materials Science), Nano| A Nature Research Solution, SpringerMaterials
All journals in the MRS portfolio welcome submissions based on the individual presentations at the 2016 MRS Fall Meeting. Papers submitted and accepted for publication in MRS Advances (www.mrs.org/mrs-advances) will be available as collections of the symposia. Visit the MRS/Cambridge University Press Publications Booth #100 in the Exhibit Hall to learn more about MRS Advances, including print options available at special rates during the meeting week only.
Session Chairs
Sudha Mokkapati