November 27 - December 4, 2020
November 27 - December 4, 2020 (Virtual)
2020 MRS Spring/Fall Meeting

Symposium F.NM07-Progress in Neuromorphic Computing Materials, Devices and Systems

Includes Symposium S.EL08—Neuromorphic Materials and Devices for Bioinspired Computing and Artificial Intelligence
 

This symposium will broadly cover current and emerging materials, devices, and systems for neuromorphic computing. The aim is the cross-fertilization between the material science community and the community of researchers working on the design and fabrication of circuits and systems. The main topics will cover materials and fabrication strategies towards hardware-adaptive computing architectures, co-design between materials/devices and circuit/system/algorithm, the interplay of different methodologies such as circuit engineering using conventional passive and active circuit elements, with employing new physical concepts and bio-inspired novel paradigms.

A key focus will be on neuromorphic approaches for complex applications such as autonomous control, pattern recognition, decision making, information processing in complex environments with high efficiency and throughput requirements. The symposium will focus on the rapid flourishing of novel materials and systems integrating memory and data processing capabilities, their organization into devices and processes toward large-scale productions.

Systems for neuromorphic computing include: phase change and valence change materials, ferroelectric tunnel junctions, magnetic devices, MemFlash devices, polymer nanocomposites, nanoparticle and nanowire networks, materials for configurable analog processors. Contribution in the field of non-Boolean computing such as oscillatory computing, reservoir computing, stochastic computing and bio-inspired approaches, are welcome.

Topics will include:

  • RRAM/memristive devices–Valence change, electrochemical and thermochemical nonvolatile devices
  • Volatile switching with desirable dynamics–Mott-transition, Ovonic threshold switching, diffusive memristors etc.
  • Spintronic and magnetic devices
  • Ferroelectric-polarization phenomena and devices
  • Phase change materials–Binary, ternary and multinary chalcogenides etc.
  • Nanoparticle and nanowire networks
  • Complex resistive switch networks
  • Materials for configurable analog processors
  • MemFlash, computing with skyrmions and spin waves
  • MemComputing, Oscillatory Computing, Stochastic Computing, Reservoir computing
  • Bio-inspired architectures and neural networks.

Invited Speakers:

  • John Boland (Trinity College, Ireland)
  • Massimiliano Di Ventra (University of California, San Diego, USA)
  • Elliot Fuller (Sandia National Laboratories, USA)
  • Tayfun Gokmen (IBM T.J. Watson Research Center, USA)
  • Laura Heyderman (Paul Scherrer Institut, Switzerland)
  • Daniele Ielmini (Politecnico di Milano, Italy)
  • Jang-Sik Lee (Pohang University, Republic of Korea)
  • Wei Lu (University of Michigan–Ann Arbor, USA)
  • Charles Mackin (IBM Almaden Research Center, USA)
  • Hossein Mosallaei (Northeastern University, USA)
  • Thomas Mussenbrock (Brandenburg University of Technology, Germany)
  • Beatriz Noheda (University of Groningen, Netherlands)
  • Alice Parker (University of California, San Diego, USA)
  • Ivan Schuller (University of California, San Diego, USA)
  • Sabina Spiga (CNR-IMM, Italy)
  • Dmitry Strukov (University of California, USA)
  • Kazuya Terabe (National Institute for Materials Science, Japan)
  • Han Wang (University of Southern California, USA)
  • J. Joshua Yang (University of Southern California, USA)
  • Yuchao Yang (Peking University, China)

Symposium Organizers

J. Joshua Yang
University of Southern California
The Department of Electrical and Computer Engineering (electrophysics)
USA

Simon Brown
University of Canterbury
Department of Physics and Astronomy
New Zealand

Ru Huang
Peking University
Institute of Microelectronics
China

Seyoung Kim
Pohang University of Science and Technology
Department of Materials Science and Engineering
Republic of Korea

Hermann Kohlstedt
Kiel University
Faculty of Engineering
Germany

Yun Seog Lee
Seoul National University
Department of Mechanical Engineering
Republic of Korea

Paolo Milani
Universita degli Studi di Milano
Physics, Interdisciplinary Center for Nanostructured Materials and Interfaces
Italy

Ilia Valov
Forschungszentrum Juelich GmbH
Electronic Materials (PGI-7)
Germany

Topics

electrical properties electronic structure lithography (deposition) magnetic properties nanoscale oxide self-assembly thin film