2020 MRS Spring/Fall Meeting
Symposium F.NM05-Emerging Materials for Quantum Information Technologies
Traditional CMOS silicon technologies will face major challenges in scaling, energy consumption and performance in the coming years. Moore's law, which guides long-term planning and sets targets for research and development for the semiconductor industry, predicts that by 2020, bits will be a few atoms in size where quantum effects will dominate. To overcome these fundamental limits and to leverage quantum effects in information technologies, new materials and devices are currently being developed. These new developments include superconducting qubit circuits with oxide technologies, nano-scale semiconductor quantum dots, hybrid gate-controllable semiconductor-superconductor devices and novel topological matter, with the possibility of exploiting new devices that are less sensitive to environment noise. A major challenge lies in interfacing materials with different structural and electronic properties to develop material platforms that leap beyond current device performances. For superconducting devices, losses near interfaces could severely limit device performance. In semiconductors, dielectric layers introduces trap centers and charge noise. Heterostructures of new topological materials with low densities of defects are central for future materials platforms for quantum information technologies. These topics have led to a plethora of recent theoretical and experimental activities, driven both by fundamental scientific questions and the promise of future technological breakthroughs.This symposium seeks to bring together researchers in both materials science and quantum information device communities.
Topics include materials issues in quantum information technologies, research focused on new quantum states of matter that can support quantum information, and new combinations of materials that offer promise to introduce new classes of quantum information devices. The goal of the symposium is to find a deeper understanding of the connection between material properties and qubit properties.
Topics will include:
- Materials interfaces and their role in quantum networks, sensing and computing device performance.
- New combinations of materials and interface states that may revolutionize quantum information device designs such as superconductor-semiconductor devices.
- Novel synthesis methods of materials and heterostructures for quantum information.
- Materials discoveries with potential for quantum information applications.
- Advanced characterization of materials for quantum information devices.
- Advances in ab-initio and multi-scale methods applied to materials used in quantum information systems.
- Interaction of materials with quantum information such as single photon/spin sources, detectors, and dynamics near the ground state.
Invited Speakers:
- David Awschalom (The University of Chicago, USA)
- Susan Coppersmith (University of New South Wales, Australia)
- Nathalie De Leon (Princeton University, USA)
- Dirk Englund (Massachusetts Institute of Technology, USA)
- Anna Fontcuberta i Morral (University of New South Wales, USA)
- Sergey Frolov (University of Pittsburgh, USA)
- Giulia Galli (University of Chicago, USA)
- Ryan Gordon (IBM, USA)
- Clayton Jackson (HRL Laboratories, LLC, USA)
- Sergei Kalinin (Oak Ridge National Laboratory, USA)
- Jelena Klinovaja (University of Basel, Switzerland)
- Roman Lutchyn (Microsoft, USA)
- Josh Mutus (Google, USA)
- Will Oliver (Massachusetts Institute of Technology, USA)
- Ioan Pop (Karlsruhe Institute of Technology, USA)
- Jay Sau (University of Maryland, USA)
- Michelle Simmons (University of New South Wales, Australia)
- Seigo Tarucha (The University of Tokyo, RIKEN, Japan)
- Lieven Vandersypen (Delft University of Technology, Netherlands)
- Amir Yacoby (Harvard University, USA)
Symposium Organizers
Tzu-Ming Lu
Sandia National Laboratories
USA
Peter Krogstrup
Microsoft Quantum - Santa Barbara (Station Q) / University of Copenhagen
Denmark
Mei-Yin Chou
Academia Sinica
Taiwan
Javad Shabani
New York University
USA
Topics
crystal growth
epitaxy
ion-implantation
kinetics
lithography (removal)
nucleation & growth
quantum materials
reactive ion etching
scanning transmission electron microscopy (STEM)
simulation