The Effects of Substrate Growth on VS₂ by Chemical Vapor Deposition

Vanadium disulfide (VS₂) has grown popular for its potential applications in energy storage and renewable energy due to its thin layered structure, metallic conductivity, and ability to form highly crystalline structures. Our research focuses on investigating the impact of vanadium disulfide growth on various substrates, such as sapphire, silicon oxide on silicon (SiO₂/Si), and gallium oxide (Ga₂O₃), using the chemical vapor deposition (CVD) technique. Furthermore, the research aims to identify the optimal growth parameters, including growth temperature, and carrier gas flow rate for each substrate to achieve a large coverage film. To achieve this, we use the carrier gases (Ar, Ar + H₂) while implementing the growth temperatures of VS₂ during the sample growth. We will measure the resulting materials using spectroscopic probes like photoluminescence, Raman, Fourier transform infrared (FTIR), and confocal laser optical microscopy to examine the surface morphology, structural quality, absorption, and reflection of materials.