MOCVD Growth of High-Quality β-(Al_xGa_1-x)₂O₃ /β-Ga₂O₃ Heterostructures and Superlattices Doped in a Wide Range of Electron Concentrations

May 13, 2022
10:15am - 10:30am

Hawai'i Convention Center, Level 3, 318B

Fikadu Alema

Takeki Itoh

Akhil Mauze

Chirag Gupta

Fikadu Alema¹,Takeki Itoh²,Akhil Mauze²,James S. Speck²,Shubhra S. Pasayat³,Chirag Gupta³,Andrei Osinsky¹

Agnitron Technology Incorporated¹,University of California, Santa Barbara²,University of Wisconsin-Madison³

epitaxy | Hall effect | vapor phase epitaxy (VPE)

Robert Kaplar, Sandia National Laboratories

Srabanti Chowdhury, Stanford University

Yoshinao Kumagai, Tokyo University of Agriculture and Technology

Julien Pernot, University of Grenoble Alpes

Srabanti Chowdhury

MOCVD Growth of High-Quality β-(AlxGa1-x)2O3 /β-Ga2O3 Heterostructures and Superlattices Doped in a Wide Range of Electron Concentrations